Amorphous GaOx based charge trap memory device for neuromorphic applications

Abstract

In this work, we demonstrate a 3-terminal field-effect based charge trap memory device with an amorphous-GaOx (a-GaOx) layer fabricated at a low deposition temperature of 250°C. Utilizing the long life-time traps in the a-GaOx/Al2O3 stack, we study the charge trap memory effect in the field effect devices. We observe more than one order of magnitude in channel current difference for two memory states with a retention of more than 102 s and endurance of 100 cycles. Our work paves a way for embedded a-GaOx memories for neuromorphic applications.