We report on the successful spin injection from EuS/Co multilayers into (100) GaAs at low temperatures. The spin injection was verified by means of polarized electroluminescence (EL) emitted from AlGaAs/GaAs-based spin-light-emitting diodes in zero external magnetic field. Spin-polarized electrons were injected from prototype EuS/Co spin injector multilayers. The use of semiconducting and ferromagnetic EuS circumvents the impedance mismatch. The EL was measured in side emission with and without an external magnetic field. A circular polarization of 5% at 8 K and 0 T was observed. In view of the rather rough interface between the GaAs substrate and first EuS layer, improvement of the interface quality is expected to considerably enhance the injected electron spin polarization.
