dc.contributor.author
Wang, Lan
dc.contributor.author
Lin, Xianzhong
dc.contributor.author
Ennaoui, Ahmed
dc.contributor.author
Wolf, Christian
dc.contributor.author
Lux-Steiner, Martha Ch.
dc.contributor.author
Klenk, Reiner
dc.date.accessioned
2018-06-08T11:03:16Z
dc.date.available
2017-02-27T12:59:40.498Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/21535
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-24826
dc.description.abstract
We report a route to deposit In2S3 thin films from air-stable, low-cost
molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin
film solar cells. Different precursor compositions and processing conditions
were studied to define a reproducible and robust process. By adjusting the ink
properties, this method can be applied in different printing and coating
techniques. Here we report on two techniques, namely spin-coating and inkjet
printing. Active area efficiencies of 12.8% and 12.2% have been achieved for
In2S3-buffered solar cells respectively, matching the performance of CdS-
buffered cells prepared with the same batch of absorbers.
en
dc.format.extent
5 Seiten
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik
dc.title
Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
dc.type
Wissenschaftlicher Artikel
dcterms.bibliographicCitation
EPJ Photovoltaics. - 7 (2016), , Artikel Nr. 70303
dc.identifier.sepid
55348
dcterms.bibliographicCitation.doi
10.1051/epjpv/2016001
dcterms.bibliographicCitation.url
http://dx.doi.org/10.1051/epjpv/2016001
refubium.affiliation
Physik
de
refubium.affiliation.other
Institut für Experimentalphysik
refubium.mycore.fudocsId
FUDOCS_document_000000026461
refubium.note.author
Der Artikel wurde in einer reinen Open-Access-Zeitschrift publiziert.
refubium.resourceType.isindependentpub
no
refubium.mycore.derivateId
FUDOCS_derivate_000000007785
dcterms.accessRights.openaire
open access
dcterms.isPartOf.issn
2105-0716