CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by
a rapid thermal process

Merdes, S.; Abou-Ras, D.; Mainz, R.; Klenk, R.; Lux-Steiner, Martha; Meeder, A.; Schock, H. W.; Klaer, J.

doi:10.1002/pip.2165

CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process

Haupttitel:

CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process

Autor*in:

Merdes, S.; Abou-Ras, D.; Mainz, R.; Klenk, R.; Lux-Steiner, Martha; Meeder, A.; Schock, H. W.; Klaer, J.

Erscheinungsjahr:

2013

Datum der Freigabe:

2014-09-11T19:45:32.525Z

Abstract:

In this letter, we report externally confirmed total area efficiencies reaching up to 12.9% for CdS/Cu(In,Ga)S2 based solar cells. These are the highest externally confirmed efficiencies for such cells. The absorbers were prepared from sputtered metals subsequently sulfurized using rapid thermal processing in sulfur vapor. Structural, compositional, and electrical properties of one of these champion cells are presented. The correlation between the Ga distribution profile and solar cell properties is discussed.

Identifier:

https://refubium.fu-berlin.de/handle/fub188/16488
http://dx.doi.org/10.17169/refubium-20669
SEP-ID: 29386

Teil des Identifiers:

ISSN (print): 10627995

Sprache:

Englisch

DDC-Klassifikation:

530 Physik

Publikationstyp:

Wissenschaftlicher Artikel

Auch erschienen in:

Progress in Photovoltaics: Research and Applications. - 21 (2013), 1, S. 88-93