Title:
Band gap of wurtzite GaAs
Subtitle:
a resonant Raman study
Author(s):
Kusch, Patryk; Breuer, Steffen; Ramsteiner, Manfred; Gelhaar, Lutz; Riechert, Henning; Reich, Stephanie
Year of publication:
2012
Available Date:
2014-03-03
Abstract:
We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of
single wurtzite and zinc-blende GaAs nanowires. The optical band gap of
wurtzite GaAs is 1.460eV ± 3meV at room temperature, and 35 ± 3meV larger than
the GaAs zinc-blende band gap. Raman measurements using incoming light
polarized parallel and perpendicular to the wire c axis allowed us to
investigate the splitting of heavy Γ9 and light-hole Γ7 band at the Γ point of
65 ± 6meV.
Part of Identifier:
ISSN (print): 1098-0121
DDC-Classification:
530 Physik
Publication Type:
Wissenschaftlicher Artikel
Also published in:
Physical Review B. - 86 (2012), 7, Artikel Nr. 075317/1-5
URL of the Original Publication:
DOI of the Original Publication:
Department/institution:
Physik
Institut für Experimentalphysik
Comments:
Der Artikel wurde in einer Open-Access-Zeitschrift publiziert.