dc.contributor.author
Kusch, Patryk
dc.contributor.author
Breuer, Steffen
dc.contributor.author
Ramsteiner, Manfred
dc.contributor.author
Gelhaar, Lutz
dc.contributor.author
Riechert, Henning
dc.contributor.author
Reich, Stephanie
dc.date.accessioned
2018-06-08T03:28:11Z
dc.date.available
2014-03-03
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/15252
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-19440
dc.description.abstract
We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of
single wurtzite and zinc-blende GaAs nanowires. The optical band gap of
wurtzite GaAs is 1.460eV ± 3meV at room temperature, and 35 ± 3meV larger than
the GaAs zinc-blende band gap. Raman measurements using incoming light
polarized parallel and perpendicular to the wire c axis allowed us to
investigate the splitting of heavy Γ9 and light-hole Γ7 band at the Γ point of
65 ± 6meV.
en
dc.rights.uri
http://journals.aps.org/authors/transfer-of-copyright-agreement
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik
dc.title
Band gap of wurtzite GaAs
dc.type
Wissenschaftlicher Artikel
dcterms.bibliographicCitation
Physical Review B. - 86 (2012), 7, Artikel Nr. 075317/1-5
dc.identifier.sepid
29440
dc.title.subtitle
a resonant Raman study
dcterms.bibliographicCitation.doi
10.1103/PhysRevB.86.075317
dcterms.bibliographicCitation.url
http://link.aps.org/doi/10.1103/PhysRevB.86.075317
refubium.affiliation
Physik
de
refubium.affiliation.other
Institut für Experimentalphysik
refubium.mycore.fudocsId
FUDOCS_document_000000019725
refubium.note.author
Der Artikel wurde in einer Open-Access-Zeitschrift publiziert.
refubium.resourceType.isindependentpub
no
refubium.mycore.derivateId
FUDOCS_derivate_000000003104
dcterms.accessRights.openaire
open access
dcterms.isPartOf.issn
1098-0121
