Title:
Charge carrier transport in ZnO/CdS/CdTe/(Cu)/Ni heterojunctions
Author(s):
Rotaru, Corneliu; Vatavu, Sergiu; Fedorov, Vladimir; Kirsch, Michael; Chetruş, Petru; Gaşin, Petru; Lux-Steiner, Martha; Rusu, Marin
Year of publication:
2013
Available Date:
2014-09-01T10:22:33.728Z
Abstract:
Charge carrier transport mechanism in the CdS/CdTe heterojunction with a zinc
oxide front contact of a ZnO:Al/i-ZnO/CdS/CdTe/Cu/Ni structure has been
investigated in the temperature range of 100–373 K. It has been found that at
forward biases the charge carrier transport mechanism is determined by
tunneling through charge states related to dislocations. An estimation of the
concentration of dislocations gives a value of 2.9 ⋅ 102 cm− 2. At reverse
biases higher than 0.7 V, the charge transport mechanism is determined by
tunneling processes. The leakage current component is predominant for reverse
voltages lower than 0.4 V.
Part of Identifier:
ISSN (print): 00406090
Keywords:
Solar cells
CdS
CdTe
Heterojunction
Charge transport mechanism
DDC-Classification:
530 Physik
Publication Type:
Wissenschaftlicher Artikel
Also published in:
Thin Solid Films. - 535 (2013), S. 241-243
URL of the Original Publication:
DOI of the Original Publication:
Department/institution:
Physik
Institut für Experimentalphysik