dc.contributor.author
Deng, Li
dc.contributor.author
Yin, Xiang
dc.contributor.author
Tong, Junwei
dc.contributor.author
Wu, Yanzhao
dc.contributor.author
Tian, Fubo
dc.contributor.author
Zhang, Xianmin
dc.date.accessioned
2024-06-20T12:51:31Z
dc.date.available
2024-06-20T12:51:31Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/43913
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-43623
dc.description.abstract
Writing and reading of magnetization states via mechanical strain are crucial for the development of ultralow-power spintronic devices. In this study, a van der Waals magnetic tunnel junction (vdW MTJ) of Fe3GaTe2/h-BN/MnBi2Te4 is constructed to explore the magnetization reversal under in-plane biaxial strains. Interestingly, the interlayer magnetic coupling of devices can be tuned to ferromagnetic and antiferromagnetic states by tensile and compressive strains, respectively. The various magnetic couplings on applied strains are analyzed using the superexchange theory. Importantly, the interlayer coupling nearly vanishes after removing external strains, ensuring the nonvolatility of magnetization reversal, resulting in the nonvolatile writing of magnetization states in the present vdW MTJ. Moreover, the tunneling magnetoresistance ratio of the device is up to −5745%, which remains −1478% even with −2% strain, showing great potential for reading the magnetization states. Therefore, this work provides an alternate avenue to write and read magnetization states in one vdW MTJ under biaxial strains.
en
dc.format.extent
10 Seiten
dc.rights.uri
https://creativecommons.org/licenses/by/4.0/
dc.subject
Exchange interactions
en
dc.subject
Electronic transport
en
dc.subject
Ferroelectric materials
en
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik::530 Physik
dc.title
Writing and reading magnetization states via strain in Fe3GaTe2/h-BN/MnBi2Te4 junction
dc.type
Wissenschaftlicher Artikel
dcterms.bibliographicCitation.articlenumber
174303
dcterms.bibliographicCitation.doi
10.1063/5.0202687
dcterms.bibliographicCitation.journaltitle
Writing and reading magnetization states via strain in Fe3GaTe2/h-BN/MnBi2Te4 junction
dcterms.bibliographicCitation.number
17
dcterms.bibliographicCitation.volume
135
dcterms.bibliographicCitation.url
https://doi.org/10.1063/5.0202687
refubium.affiliation
Physik
refubium.resourceType.isindependentpub
no
dcterms.accessRights.openaire
open access
dcterms.isPartOf.eissn
1089-7550
refubium.resourceType.provider
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