dc.contributor.author
Abdel, Dilara
dc.date.accessioned
2024-04-10T11:00:16Z
dc.date.available
2024-04-10T11:00:16Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/43053
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-42769
dc.description.abstract
In response to the climate crisis, there is a need for technological innovations to reduce the escalating CO2 emissions. Two promising semiconductor technologies in this regard, perovskite-based solar cells and memristive devices based on two-dimensional layered transition metal dichalcogenide (TMDC), can potentially contribute to the expansion of renewable energy sources and the development of energy-efficient computing hardware.
Within perovskite and TMDC materials, ions dislocate from their ideal position in the semiconductor crystal and leave void spaces. So far, the precise influence of these vacancies and their dynamics on device performance remain underexplored. Therefore, this thesis is dedicated to comprehensively examining the impact of vacancy-assisted charge transport in innovative semiconductor devices through a theoretical approach by modeling and simulating systems of partial differential equations. We start by deriving drift-diffusion equations using thermodynamic principles, including Maxwell-Stefan diffusion and the grand canonical ensemble of an ideal lattice gas. Particular attention is directed towards accurately limiting vacancy accumulation. Furthermore, we formulate drift-diffusion models to describe charge transport in perovskite solar cells and TMDC memristors. We discretize the transport equations via the finite volume method and establish the existence of discrete solutions using the entropy method. Our study concludes with simulations conducted with ChargeTransport.jl, an open source software tool developed in the programming language Julia. These simulations investigate the large time behavior of discrete solutions for both transport models. Additionally, we explore the influence of volume exclusion effects on charge transport in perovskite solar cells and compare our simulation results with experimental measurements found in literature for TMDC-based memristive devices.
en
dc.format.extent
XIX, 179 Seiten
dc.rights.uri
http://www.fu-berlin.de/sites/refubium/rechtliches/Nutzungsbedingungen
dc.subject
semiconductor device simulation
en
dc.subject
drift-diffusion models
en
dc.subject
finite volume method
en
dc.subject
perovskite solar cells
en
dc.subject
memristive devices
en
dc.subject
transition metal dichalcogenide
en
dc.subject
volume exclusion effects
en
dc.subject
electronic-ionic charge transport
en
dc.subject.ddc
500 Naturwissenschaften und Mathematik::510 Mathematik::510 Mathematik
dc.title
Modeling and simulation of vacancy-assisted charge transport in innovative semiconductor devices
dc.contributor.gender
female
dc.contributor.firstReferee
Farrell, Patricio
dc.contributor.furtherReferee
Rotundo, Nella
dc.date.accepted
2024-02-15
dc.identifier.urn
urn:nbn:de:kobv:188-refubium-43053-0
dc.title.translated
Modellierung und Simulation von vakanzenbasiertem Ladungstransport in innovativen Halbleiterbauteilen
ger
refubium.affiliation
Mathematik und Informatik
dcterms.accessRights.dnb
free
dcterms.accessRights.openaire
open access
dcterms.accessRights.proquest
accept