dc.contributor.author
Farrell, Patricio
dc.date.accessioned
2023-02-16T07:25:31Z
dc.date.available
2023-02-16T07:25:31Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/37941
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-37657
dc.description.abstract
We present charge transport models for novel semiconductor devices which may include ionic species as well as their thermodynamically consistent finite volume discretization.
en
dc.format.extent
ii, 142 Seiten
dc.rights.uri
http://www.fu-berlin.de/sites/refubium/rechtliches/Nutzungsbedingungen
dc.subject
Drift-diffusion
en
dc.subject
semiconductor device simulation
en
dc.subject
charge transport models
en
dc.subject
finite volume methods
en
dc.subject
flux approximations
en
dc.subject.ddc
500 Naturwissenschaften und Mathematik::510 Mathematik::510 Mathematik
dc.title
Drift-diffusion models for innovative semiconductor devices and their numerical solution
dc.contributor.gender
male
dc.contributor.firstReferee
N.N.
dc.contributor.furtherReferee
N.N.
dc.date.accepted
2023-01-25
dc.identifier.urn
urn:nbn:de:kobv:188-refubium-37941-7
refubium.affiliation
Mathematik und Informatik
dcterms.accessRights.dnb
free
dcterms.accessRights.openaire
open access
