dc.contributor.author
Niederhausen, Jens
dc.contributor.author
MacQueen, Rowan W.
dc.contributor.author
Özkol, Engin
dc.contributor.author
Gersmann, Clemens
dc.contributor.author
Futscher, Moritz H.
dc.contributor.author
Liebhaber, Martin
dc.contributor.author
Friedrich, Dennis
dc.contributor.author
Borgwardt, Mario
dc.contributor.author
Mazzio, Katherine A.
dc.contributor.author
Amsalem, Patrick
dc.contributor.author
Nguyen, Minh Hai
dc.contributor.author
Daiber, Benjamin
dc.contributor.author
Mews, Mathias
dc.contributor.author
Rappich, Jörg
dc.contributor.author
Ruske, Florian
dc.contributor.author
Eichberger, Rainer
dc.contributor.author
Ehrler, Bruno
dc.contributor.author
Lips, Klaus
dc.date.accessioned
2021-03-30T05:59:06Z
dc.date.available
2021-03-30T05:59:06Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/30045
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-29787
dc.description.abstract
The rational combination of tetracene (Tc) with crystalline silicon (c-Si) could greatly enhance c-Si solar cell efficiencies via singlet fission. The Tc/c-Si energy-level alignment (ELA) is thought to be central to controlling the required interface transfer processes. We modified hydrogen-terminated c-Si (H–Si) with 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6TCNNQ), C60, or NF3 and probed the effect on the c-Si surface chemistry, the Tc/c-Si ELA, the Tc morphology, and solar cell characteristics using ultraviolet and X-ray photoelectron spectroscopy, atomic force microscopy, X-ray diffraction, photoluminescence transients, device measurements, and transfer matrix-optical modeling. Submonolayer interlayers of F6TCNNQ shifted the Tc/H–Si(111) ELA by up to 0.55 eV. C60 showed no notable effect on the ELA and proved detrimental for the Tc film morphology and solar cell performance. Neither F6TCNNQ nor C60 improved the Tc-related photocurrent significantly. NF3 CVD substituted the H-termination of H–Si(100) with more electronegative species and resulted in work functions as high as 6 eV. This changed the Tc/H–Si(100) ELA by up to 0.45 eV. NF3 plasma from a remote source caused pronounced c-Si oxidation and a diminished c-Si photoluminescence lifetime, which was not observed for NF3 plasma created in close proximity to the c-Si surface or neutral NF3. We discuss possible reasons for why the improved ELA does not lead to an improved singlet fission harvest.
en
dc.format.extent
25 S. (Manuskriptversion)
dc.rights.uri
http://www.fu-berlin.de/sites/refubium/rechtliches/Nutzungsbedingungen
dc.subject
Work function
en
dc.subject
Layered materials
en
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik::539 Moderne Physik
dc.title
Energy-Level Alignment Tuning at Tetracene/c-Si Interfaces
dc.type
Wissenschaftlicher Artikel
dc.identifier.sepid
80401
dcterms.bibliographicCitation.doi
10.1021/acs.jpcc.0c08104
dcterms.bibliographicCitation.journaltitle
The Journal of Physical Chemistry C
dcterms.bibliographicCitation.number
51
dcterms.bibliographicCitation.originalpublishername
Soc.
dcterms.bibliographicCitation.originalpublisherplace
Washington, DC, Washington, DC
dcterms.bibliographicCitation.pagestart
27867
dcterms.bibliographicCitation.pageend
27881
dcterms.bibliographicCitation.volume
124
dcterms.bibliographicCitation.url
http://dx.doi.org/10.1021/acs.jpcc.0c08104
dcterms.rightsHolder.url
https://publish.acs.org/publish/author_guidelines?coden=jacsat#prior_publication_policy
refubium.affiliation
Physik
refubium.affiliation.other
Institut für Experimentalphysik
refubium.resourceType.isindependentpub
no
dcterms.accessRights.openaire
open access
dcterms.isPartOf.eissn
1932-7447