dc.contributor.author
dos Santos, Alexandre P.
dc.contributor.author
Uematsu, Yuki
dc.contributor.author
Rathert, Alexander
dc.contributor.author
Loche, Philip
dc.contributor.author
Netz, Roland R.
dc.date.accessioned
2021-03-19T10:05:34Z
dc.date.available
2021-03-19T10:05:34Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/29990
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-29732
dc.description.abstract
Solvent-implicit Monte Carlo (MC) simulations and mean-field theory are used to predict activity coefficients and excess interfacial tensions for NaF, NaCl, NaI, KF, KCl, and KI solutions in good agreement with experimental data over the entire experimentally available concentration range. The effective ionic diameters of the solvent-implicit simulation model are obtained by fits to experimental activity coefficient data. The experimental activity coefficients at high salt concentrations are only reproduced if the ion-specific concentration-dependent decrement of the dielectric constant is included. The dielectric-constant dependent contribution of the single-ion solvation free energy to the activity coefficient is significant and is included. To account for the ion-specific excess interfacial tension of salt solutions, in addition to non-ideal solution effects and the salt-concentration-dependent dielectric decrement, an ion-specific ion–interface interaction must be included. This ion–interface interaction, which acts in addition to the dielectric image-charge repulsion, is modeled as a box potential, is considerably more long-ranged than the ion radius, and is repulsive for all ions considered except iodide, in agreement with previous findings and arguments. By comparing different models that include or exclude bulk non-ideal solution behavior, dielectric decrement effects, and ion–interface interaction potentials, we demonstrate how bulk and interfacial ion-specific effects couple and partially compensate each other. Our MC simulations, which correctly include ionic correlations and interfacial dielectric image-charge repulsion, are used to determine effective ion–surface interaction potentials that can be used in a modified Poisson–Boltzmann theory.
en
dc.format.extent
14 Seiten
dc.rights.uri
http://www.fu-berlin.de/sites/refubium/rechtliches/Nutzungsbedingungen
dc.subject
Molecular dynamics
en
dc.subject
Dielectric properties
en
dc.subject
Interfacial tension
en
dc.subject
Mean field theory
en
dc.subject
Electrolytes
en
dc.subject
Monte Carlo methods
en
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik::530 Physik
dc.title
Consistent description of ion-specificity in bulk and at interfaces by solvent implicit simulations and mean-field theory
dc.type
Wissenschaftlicher Artikel
dc.identifier.sepid
80465
dcterms.bibliographicCitation.articlenumber
034103
dcterms.bibliographicCitation.doi
10.1063/5.0016103
dcterms.bibliographicCitation.journaltitle
The journal of chemical physics
dcterms.bibliographicCitation.number
3
dcterms.bibliographicCitation.originalpublishername
American Institute of Physics
dcterms.bibliographicCitation.originalpublisherplace
Melville, NY
dcterms.bibliographicCitation.volume
153
dcterms.bibliographicCitation.url
http://dx.doi.org/10.1063/5.0016103
refubium.affiliation
Physik
refubium.affiliation.other
Institut für Theoretische Physik
refubium.note.author
Open Access in Allianz- und Nationallizenz.
refubium.resourceType.isindependentpub
no
dcterms.accessRights.openaire
open access
dcterms.isPartOf.eissn
0021-9606