dc.contributor.author
Wegner, Berthold
dc.contributor.author
Behrends, Jan
dc.contributor.author
Tait, Claudia E.
dc.contributor.author
Lungwitz, Dominique
dc.contributor.author
Mansour, Ahmed E.
dc.contributor.author
Tanaka, Naoki
dc.contributor.author
Zhai, Tianshu
dc.contributor.author
Duhm, Steffen
dc.contributor.author
Forster, Michael
dc.contributor.author
Shoji, Yoshiaki
dc.date.accessioned
2020-07-28T12:27:32Z
dc.date.available
2020-07-28T12:27:32Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/27919
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-27672
dc.description.abstract
Molecular doping allows enhancement and precise control of electrical properties of organic semiconductors, and is thus of central technological relevance for organic (opto‐) electronics. Beyond single‐component molecular electron acceptors and donors, organic salts have recently emerged as a promising class of dopants. However, the pertinent fundamental understanding of doping mechanisms and doping capabilities is limited. Here, the unique capabilities of the salt consisting of a borinium cation (Mes2B+; Mes: mesitylene) and the tetrakis(penta‐fluorophenyl)borate anion [B(C6F5)4]− is demonstrated as p‐type dopant for polymer semiconductors. With a range of experimental methods, the doping mechanism is identified to comprise electron transfer from the polymer to Mes2B+, and the positive charge on the polymer is stabilized by [B(C6F5)4]−. Notably, the former salt cation leaves during processing and is not present in films. The anion [B(C6F5)4]− even enables the stabilization of polarons and bipolarons in poly(3‐hexylthiophene), not yet achieved with other molecular dopants. From doping studies with high ionization energy polymer semiconductors, the effective electron affinity of Mes2B+[B(C6F5)4]− is estimated to be an impressive 5.9 eV. This significantly extends the parameter space for doping of polymer semiconductors.
en
dc.format.extent
15 Seiten
dc.rights.uri
https://creativecommons.org/licenses/by/4.0/
dc.subject
organic semiconductors
en
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik::530 Physik
dc.title
An organic borate salt with superior p‐doping capability for organic semiconductors
dc.type
Wissenschaftlicher Artikel
dcterms.bibliographicCitation.articlenumber
2001322
dcterms.bibliographicCitation.doi
10.1002/advs.202001322
dcterms.bibliographicCitation.journaltitle
Advanced science
dcterms.bibliographicCitation.url
https://doi.org/10.1002/advs.202001322
refubium.affiliation
Physik
refubium.resourceType.isindependentpub
no
dcterms.accessRights.openaire
open access
dcterms.isPartOf.eissn
2198-3844
refubium.resourceType.provider
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