dc.contributor.author
Ramsteiner, M.
dc.contributor.author
Brandt, Oliver
dc.contributor.author
Kusch, P.
dc.contributor.author
Breuer, Steffen
dc.contributor.author
Reichm, S.
dc.contributor.author
Geelhaar, L.
dc.date.accessioned
2018-06-08T03:34:42Z
dc.date.available
2015-10-14T07:57:29.665Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/15485
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-19673
dc.description.abstract
We investigate the Raman intensity of EH2 phonons in wurtzite GaAs nanowire
ensembles as well as single nanowires as a function of excitation wavelength.
For nanowires with radii in the range of 25 nm, an almost complete quenching
of the EH2 phonon line is observed for excitation wavelengths larger than 600
nm. The observed behavior is quantitatively explained by the dielectric
polarization contrast for the coupling of light into the GaAs nanowires. Our
results define the limits of Raman spectroscopy for the detection of the
wurtzite phase in semiconductor nanowires.
en
dc.rights.uri
http://publishing.aip.org/authors/web-posting-guidelines
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik
dc.title
Quenching of the E2 phonon line in the Raman spectra of wurtzite GaAs
nanowires caused by the dielectric polarization contrast
dc.type
Wissenschaftlicher Artikel
dcterms.bibliographicCitation
Appl. Phys. Lett. - 103 (2013), 4, Artikel Nr. 043121
dcterms.bibliographicCitation.doi
10.1063/1.4817078
dcterms.bibliographicCitation.url
http://dx.doi.org/10.1063/1.4817078
refubium.affiliation
Physik
de
refubium.funding
OpenAccess Publikation in Allianzlizenz
refubium.mycore.fudocsId
FUDOCS_document_000000023300
refubium.resourceType.isindependentpub
no
refubium.mycore.derivateId
FUDOCS_derivate_000000005535
dcterms.accessRights.openaire
open access