dc.contributor.author
Lin, Xianzhong
dc.contributor.author
Ennaoui, Ahmed
dc.contributor.author
Levcenko, Sergiu
dc.contributor.author
Dittrich, Thomas
dc.contributor.author
Kavalakkatt, Jaison
dc.contributor.author
Kretzschmar, Steffen
dc.contributor.author
Unold, Thomas
dc.contributor.author
Lux-Steiner, Martha
dc.date.accessioned
2018-06-08T02:56:38Z
dc.date.available
2016-02-12T12:19:55.314Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/14183
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-18380
dc.description.abstract
Defect states in Cu 2ZnSn(SxSe1−x)4 thin films with x = 0.28, 0.36, and 1 were
studied by combining photoluminescence (PL) and modulated surface photovoltage
(SPV) spectroscopy. A single broad band emission in the PL spectra was
observed and can be related to quasi-donor-acceptor pair transitions. The
analysis of the temperature dependent quenching of the PL band (x = 0.28,
0.36, and 1) and SPV (x = 0.28) signals resulted in activation energies below
150 meV for PL and about 90 and 300 meV for SPV. Possible intrinsic point
defects that might be associated with these observed activation energies are
discussed.
en
dc.rights.uri
http://publishing.aip.org/authors/web-posting-guidelines
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik
dc.title
Defect study of Cu2ZnSn(SxSe1−x)4 thin film absorbers using photoluminescence
and modulated surface photovoltage spectroscopy
dc.type
Wissenschaftlicher Artikel
dcterms.bibliographicCitation
Applied Physics Letters. - 106 (2015), 1, S.013903 (5 Seiten)
dc.identifier.sepid
48500
dcterms.bibliographicCitation.doi
10.1063/1.4905311
dcterms.bibliographicCitation.url
http://dx.doi.org/10.1063/1.4905311
refubium.affiliation
Physik
de
refubium.affiliation.other
Institut für Experimentalphysik
refubium.mycore.fudocsId
FUDOCS_document_000000023892
refubium.resourceType.isindependentpub
no
refubium.mycore.derivateId
FUDOCS_derivate_000000005980
dcterms.accessRights.openaire
open access
dcterms.isPartOf.issn
0003-6951
