dc.contributor.author
Dil, Hugo
dc.date.accessioned
2018-06-07T22:04:01Z
dc.date.available
2006-10-09T00:00:00.649Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/8809
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-13008
dc.description
Title
1
Background and theory
1
1.1. Towards quantum size effects
1.2. Quantum well states: "textbook physics in the lab"
1.3. Electronic growth model and self-organized growth
1.4. Influence of the substrate and interface
1
3
9
14
2
Experimental
17
2.1. Technology
2.1.1. Ultra high vacuum equipment
2.1.2. Angle Resolved Photoemission Spectroscopy
2.1.3. The Omicron AR65 and Specs Phoibos 100 CCD electron energy analysers
2.1.4. Alignment of Sample, Analyser and Light
2.1.5. Synchrotron Radiation
2.2. Sample preparation
2.2.1. Preparation and cleaning of the substrates
2.2.2. Preparation of the metal overlayers
17
17
19
23
28
30
31
31
34
3
Two way influence of the atomic and electronic structure
37
3.1. Influence of the atomic on the electronic structure:
The formation of Quantum Well States
3.1.1. Quantum Well States in thin Pb films
3.1.2. Quantum Well States in thin In films
3.1.3. Quantum Well States in thin Al films
3.2. Influence of the electronic on the atomic structure: Electronic growth
37
37
50
57
62
4
Substrate and interface effects
71
4.1. The influence of lattice mismatch and relaxation on QWS
4.2. Influence of the interface atomic structure and the substrate bandgap
4.3. Coupling of quantum wells: Pb/Al/Si(111)
4.4. Hybridization of QWS with substrate bands
71
78
84
89
5
Quantum Well States beyond the single particle model
95
5.1. Electron localization and correlation effects in Pb/Si(111)
5.2. Electron-phonon coupling: In on Si(111)
98
106
6
Summary
115
Bibliography
117
Acknowledgements 127
Curriculum Vitae 129
Zusammenfassung 131
dc.description.abstract
This thesis investigates the interplay between reduced dimensionality,
electronic structure, and interface effects in ultrathin metal layers (Pb, In,
Al) on a variety of substrates (Si, Cu, graphite). These layers can be grown
with such a perfection that electron confinement in the direction normal to
the film leads to the occurrence of quantum well states in their valence
bands. These quantum well states are studied in detail, and their behaviour
with film thickness, on different substrates, and other parameters of growth
are used here to characterise a variety of physical properties of such
nanoscale systems. The sections of the thesis deal with a determination of
quantum well state energies for a large data set on different systems, the
interplay between film morphology and electronic structure, and the influence
of substrate electronic structure on their band shape; finally, new ground is
broken by demonstrating electron localization and correlation effects, and the
possibility to measure the influence of electron-phonon coupling in bulk
bands.
de
dc.description.abstract
In dieser Dissertation wird die Wechselwirkung zwischen Dimensionalität,
elektronischer Struktur und Grenzflächeneffekten in ultradünnen
Metallschichten (Pb, In, Al) auf verschiedenen Substraten (Si, Cu, Graphit)
untersucht. Derartige Schichten können so perfekt erzeugt werden, daß das
Confinement der Elektronen in der Richtung senkrecht zur Schicht die
Aufspaltung des Valenzbandes in Quantentopfniveaus zur Folge hat. Diese
Quantentopfniveaus werden im Detail untersucht, und ihre Abhängigkeit von
Schichtdicke, der Art des Substrates, und anderen Wachtumsparametern wird
benutzt, um eine Reihe von Eigenschaften derartiger Nanosysteme zu
charakterisieren. Die Abschnitte der Dissertation legen eine Analyse der
Energien der Quantentopf-Zustände für ein große Anzahl von Systemen vor,
analysieren die Einwirkung der elektronischen Struktur auf die Morphologie des
Schichtwachstums, und klären den Einfluß der Substrat-Bandstruktur auf die
Dispersion der Zustände; schließlich wird der bisher noch nicht untersuchte
Einfluß von Lokalisierung und Korrelation der Zustände sowie der Elektron-
Phonon-Kopplung in Volumenbänden behandelt.
de
dc.rights.uri
http://www.fu-berlin.de/sites/refubium/rechtliches/Nutzungsbedingungen
dc.subject
ARPES Quantum size effects interactions
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik::530 Physik
dc.title
Electron confinement in thin metal films
dc.contributor.firstReferee
Prof. Karsten Horn
dc.contributor.furtherReferee
Prof. Paul Fumagalli
dc.date.accepted
2006-07-12
dc.date.embargoEnd
2006-10-19
dc.identifier.urn
urn:nbn:de:kobv:188-fudissthesis000000002362-0
dc.title.subtitle
Structure, morphology and interactions
dc.title.translated
Elektronen-Confinement in dünnen Metallschichten
de
dc.title.translatedsubtitle
Struktur, Morphologie und Wechselwirkung
de
refubium.affiliation
Physik
de
refubium.mycore.fudocsId
FUDISS_thesis_000000002362
refubium.mycore.transfer
http://www.diss.fu-berlin.de/2006/513/
refubium.mycore.derivateId
FUDISS_derivate_000000002362
dcterms.accessRights.dnb
free
dcterms.accessRights.openaire
open access
