dc.contributor.author
Munshi, A. Mazid
dc.contributor.author
Kim, Dong-Chul
dc.contributor.author
Heimdal, Carl Philip
dc.contributor.author
Heilmann, Martin
dc.contributor.author
Christiansen, Silke H.
dc.contributor.author
Vullum, Per Erik
dc.contributor.author
Helvoort, Antonius T. J. van
dc.contributor.author
Weman, Helge
dc.date.accessioned
2019-08-26T15:01:41Z
dc.date.available
2019-08-26T15:01:41Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/25355
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-4059
dc.description.abstract
Wide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III–V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six {101⎯⎯1} semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications.
en
dc.format.extent
6 Seiten
dc.rights.uri
https://creativecommons.org/licenses/by/4.0/
dc.subject
vapor phase epitaxy
en
dc.subject
AlGaN nanopyramid arrays
en
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik::530 Physik
dc.title
Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy
dc.type
Wissenschaftlicher Artikel
dcterms.bibliographicCitation.articlenumber
263102
dcterms.bibliographicCitation.doi
10.1063/1.5052054
dcterms.bibliographicCitation.journaltitle
Applied physics letters
dcterms.bibliographicCitation.volume
113
dcterms.bibliographicCitation.url
https://doi.org/10.1063/1.5052054
refubium.affiliation
Physik
refubium.resourceType.isindependentpub
no
dcterms.accessRights.openaire
open access
dcterms.isPartOf.issn
0003-6951
dcterms.isPartOf.eissn
1077-3118