dc.contributor.author
Merdes, S.
dc.contributor.author
Abou-Ras, Daniel
dc.contributor.author
Mainz, R.
dc.contributor.author
Klenk, R.
dc.contributor.author
Lux-Steiner, Martha
dc.contributor.author
Meeder, A.
dc.contributor.author
Schock, H. W.
dc.contributor.author
Klaer, J.
dc.date.accessioned
2018-06-08T04:03:09Z
dc.date.available
2014-09-11T19:45:32.525Z
dc.identifier.uri
https://refubium.fu-berlin.de/handle/fub188/16488
dc.identifier.uri
http://dx.doi.org/10.17169/refubium-20669
dc.description.abstract
In this letter, we report externally confirmed total area efficiencies
reaching up to 12.9% for CdS/Cu(In,Ga)S2 based solar cells. These are the
highest externally confirmed efficiencies for such cells. The absorbers were
prepared from sputtered metals subsequently sulfurized using rapid thermal
processing in sulfur vapor. Structural, compositional, and electrical
properties of one of these champion cells are presented. The correlation
between the Ga distribution profile and solar cell properties is discussed.
en
dc.rights.uri
http://olabout.wiley.com/WileyCDA/Section/id-817011.html
dc.subject.ddc
500 Naturwissenschaften und Mathematik::530 Physik
dc.title
CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by
a rapid thermal process
dc.type
Wissenschaftlicher Artikel
dcterms.bibliographicCitation
Progress in Photovoltaics: Research and Applications. - 21 (2013), 1, S. 88-93
dc.identifier.sepid
29386
dcterms.bibliographicCitation.doi
10.1002/pip.2165
dcterms.bibliographicCitation.url
http://dx.doi.org/10.1002/pip.2165
refubium.affiliation
Physik
de
refubium.affiliation.other
Institut für Experimentalphysik
refubium.mycore.fudocsId
FUDOCS_document_000000020948
refubium.resourceType.isindependentpub
no
refubium.mycore.derivateId
FUDOCS_derivate_000000003903
dcterms.accessRights.openaire
open access
dcterms.isPartOf.issn
10627995
