Title:
Defect study of Cu2ZnSn(SxSe1−x)4 thin film absorbers using photoluminescence
and modulated surface photovoltage spectroscopy
Author(s):
Lin, Xianzhong; Ennaoui, Ahmed; Levcenko, Sergiu; Dittrich, Thomas; Kavalakkatt, Jaison; Kretzschmar, Steffen; Unold, Thomas; Lux-Steiner, Martha
Year of publication:
2015
Available Date:
2016-02-12T12:19:55.314Z
Abstract:
Defect states in Cu 2ZnSn(SxSe1−x)4 thin films with x = 0.28, 0.36, and 1 were
studied by combining photoluminescence (PL) and modulated surface photovoltage
(SPV) spectroscopy. A single broad band emission in the PL spectra was
observed and can be related to quasi-donor-acceptor pair transitions. The
analysis of the temperature dependent quenching of the PL band (x = 0.28,
0.36, and 1) and SPV (x = 0.28) signals resulted in activation energies below
150 meV for PL and about 90 and 300 meV for SPV. Possible intrinsic point
defects that might be associated with these observed activation energies are
discussed.
Part of Identifier:
ISSN (print): 0003-6951
DDC-Classification:
530 Physik
Publication Type:
Wissenschaftlicher Artikel
Also published in:
Applied Physics Letters. - 106 (2015), 1, S.013903 (5 Seiten)
URL of the Original Publication:
DOI of the Original Publication:
Department/institution:
Physik
Institut für Experimentalphysik