id,collection,dc.contributor.author,dc.date.accessioned,dc.date.available,dc.date.issued,dc.description.abstract[en],dc.format.extent,dc.identifier.sepid,dc.identifier.uri,dc.language,dc.rights.uri,dc.subject.ddc,dc.title,dc.type,dcterms.accessRights.openaire,dcterms.bibliographicCitation,dcterms.bibliographicCitation.doi,dcterms.bibliographicCitation.url,dcterms.isPartOf.issn,refubium.affiliation.other,refubium.affiliation[de],refubium.mycore.derivateId,refubium.mycore.fudocsId,refubium.note.author,refubium.resourceType.isindependentpub "0bccf22c-5941-4181-b56f-7af26682aa58","fub188/16","Jäckle, Sara||Mattiza, Matthias||Liebhaber, Martin||Brönstrup, Gerald||Rommel, Mathias||Lips, Klaus||Christiansen, Silke","2018-06-08T04:11:09Z","2015-10-01T05:49:39.715Z","2015","We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n- Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/PEDOT:PSS heterojunction is presented. The current- voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT:PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction.","12 S.","46115","https://refubium.fu-berlin.de/handle/fub188/16759||http://dx.doi.org/10.17169/refubium-20940","eng","http://creativecommons.org/licenses/by/4.0/","500 Naturwissenschaften und Mathematik::530 Physik","Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells","Wissenschaftlicher Artikel","open access","Scientific Reports. - 5 (2015), Artikel Nr.13008","10.1038/srep13008","http://dx.doi.org/10.1038/srep13008","2045-2322","Institut für Experimentalphysik:::0e15dd66-95f1-40d5-8307-e68203f86a76:::600","Physik","FUDOCS_derivate_000000005467","FUDOCS_document_000000023199","Der Artikel wurde in einer Open-Access-Zeitschrift publiziert.","no"